Abstract: We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, ...
Abstract: The effects of negative bias temperature instability (NBTI) on emerging tunnel FET (TFET) devices are setting of important reliability concern for analog/digital circuit design. In this work ...
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