A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

Durham, N.C. — Nitronex has introduced a 5-W GaN-on-Si RF power transistor with higher frequency ranges. The 28-V, 5-W high electron mobility transistor (HEMT) provides frequency ranges between 5.1 to ...

A rapid increase in wireless connectivity and more sensors, coupled with a shift away from monolithic SoCs toward heterogeneous integration, is driving up the amount of analog/RF content in systems ...

IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...

Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...