The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...
The first generation of GaN transistors has yielded efficient devices that operate at 600V with turn-on and turn-off times of 3.5 nsec and 7.0 nsec, respectively. Switching times are improved through ...
A new type of transistor could bring about a bevy of innovative electronic applications, ranging from wearables to implants to IoT devices, due to the tiny amount of power it uses. Developed by ...
The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...
A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
Yokogawa said its latest high-voltage, wide-bandwidth probe can stay on top of the faster switching speeds of next-generation power electronics like SiC. A new high-voltage, wide-bandwidth probe gives ...
High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...
Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...
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