KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, extends its leadership in SiC power device technology with the release of the industry’s ...
Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...
The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...
The impact of materials on designing reliable devices. How packaging plays an important role in SiC MOSFET design. Determining the FIT rate for SiC MOSFETs. There’s no doubt that the material ...
Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...
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