Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.

Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...

IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.

High-power broadcast-TV transmitter design should become easier with the MRF6P3300H enhancement-mode MOSFET. Designed for use in TV transmitters of 1, 5, and 10 kW, it can dissipate up to 300 W. It's ...

LOWELL, Mass.--(BUSINESS WIRE)--M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, today announced a new ceramic GaN on SiC ...

Cree on June 13 announced that it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400 watts ...

Freescale Semiconductor has introduced a 50V laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than other UHF TV broadcast solutions. The ...