Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...
Guerrilla RF’s GRF5509 high-performance power amplifier paired with Impinj’s advanced RAIN RFID reader chips to enable increased read range and improved readability of RAIN RFID tags Guerrilla RF, Inc ...
On one chip, the device integrates all necessary analog and mixed-signal functions to automatically control the gate bias voltage of an LDMOS transistor for regulating the output power of the RF power ...
With so much attention on IBOC, it is appropriate to step back and review the basic principles of RF amplifiers. The radio transmitter is a collection of stages. Each stage modifies the signal in some ...
Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...
NEW DELHI, June 12, 2025 (GLOBE NEWSWIRE) -- Elite RF, a U.S.-based innovator in RF amplifier solutions, announces its entry into the C-band and S-band high-power RF amplifier market. The new systems ...
Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a ...
Battery life or rather runtime is crucial in portable wireless systems such as cell phones, PDAs, laptop computers, and so on because it ultimately defines the device's mobility. With decreasing form ...
GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) today announced that its high-efficiency GRF5509 4-watt power amplifier was selected by Impinj (NASDAQ: PI) for use in their ...
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