TOKYO--(BUSINESS WIRE)--Nikon Corporation has announced release of the NSR-S622D ArF immersion scanner to deliver world-class overlay and ultra-high productivity for the most demanding multiple ...
Continuing to rely on 193nm immersion lithography with multiple patterning is becoming much more difficult at 7nm and 5nm. With the help of various resolution enhancement techniques, optical ...
Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are ...
Applied Materials unveiled a new technology to complement ASML's EUV equipment, helping chipmakers remove the need for multiple patterning and creating economic and environmental benefits. Save my ...
TOKYO--(BUSINESS WIRE)--Nikon Corporation introduces the NSR-S631E ArF immersion scanner, ensuring world-class device patterning and optimum fab productivity to fully satisfy real-world 7 nm node ...
Layout decomposition represents a critical step in the semiconductor manufacturing process, whereby integrated circuit designs are partitioned into multiple layers or masks to overcome the inherent ...
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