Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...
As artificial intelligence (AI) continues to advance, researchers have identified a breakthrough that could make AI technologies faster and more efficient. As artificial intelligence (AI) continues to ...
Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
Total Revenues To Reach $133.75 Billion By 2030, Driven By The Rising Demand For High-Speed Memory In AI And 5G Applications. Dublin, Jan. 27, 2026 (GLOBE NEWSWIRE) -- The Semiconductor Memory Market ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced sampling [1] of the industry’s first [2] Universal Flash Storage [3] (UFS) Ver. 4.0 embedded flash ...
A diagram of the material developed using on-axis magnetron sputtering. By applying a current through the platinum material on top of the TmIG, researchers were able to reverse the magnetization ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...
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