IXYS announced the availability of IX6610 and IX6611 devices as high-speed gate driver chipset. It includes a logic interface (IX6610) and a MOSFET/IGBT gate driver (the IX6611). The chipset is ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has today started to provide engineering samples of a gate driver [1] IC, "TB9084FTG,” for three-phase ...

CHANDLER, Ariz., Jan. 21, 2026 (GLOBE NEWSWIRE) -- To meet the demanding needs of high-voltage power management applications, Microchip Technology (Nasdaq: MCHP) today announces the introduction of ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new SCALE-2 gate driver ...

TDK Corp. has introduced two new types of the EPCOS InsuGate series (B78541A) transformers, part of the UI7 platform. These compact SMT transformers with a high working voltage target gate-driver ...

As high-power MOSFETs present a significant load to their associated gate drive circuit, efficient operation requires the proper drive. One requirement for the gate driver in high frequency ...

ST has announced two new high-speed half-bridge gate drivers that bring GaN efficiency, thermal performance, and ...

Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed at supporting the growing adoption of silicon carbide (SiC) power devices.

The new range comprises 12 devices offered in half-bridge, high-side/low-side and three-phase driver configurations. According to the company, the portfolio is designed to support engineers developing ...

IXYS Corporation announced a high-speed gate driver chipset that includes a logic interface (the IX6610) and a MOSFET/IGBT gate driver (the IX6611). IXYS Corporation announced a high-speed gate driver ...