At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and ...

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.

High-voltage transient spikes generated during power conversion or gate-drive switching can be very harmful. In a motor-drive application, voltage derivation over time (dV/dt) transients may break the ...