HILLSBORO, Ore. & RICHARDSON, Texas--(BUSINESS WIRE)-- TriQuint Semiconductor, Inc. (NAS: TQNT) , a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.

Navitas Semiconductor has announced that its high-power GaNSafe ICs have achieved automotive qualification under the AEC-Q100 and AEC-Q101 standards, marking a significant advancement in gallium ...

Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today that its GaN technology powers ...

GaN based HEMTs (high electron mobility transistors) offer efficiency, density and cost advantages compared with silicon based devices. These features should result in widespread adoption of GaN ...

Gallium nitride (GaN) transistors have certainly increased power system performance and lowered the relative cost of components. But when it comes to quality and reliability, how does GaN stack up ...

TriQuint's New Process Enables More Robust, High-Efficiency RF Devices HILLSBORO, Ore. & RICHARDSON, Texas--(BUSINESS WIRE)-- TriQuint Semiconductor, Inc. (NAS: TQNT) , a leading RF products ...