DURHAM, N.C., JANUARY 28, 2009 — Cree, Inc (Nasdaq: CREE) announces the sample release of two 120W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...

Cree, Inc. (Nasdaq: CREE) announces the sample release of two new GaN HEMT transistors, expanding the power range and addressable applications of the Cree product family. The CGH40006P is a 6-Watt GaN ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...

Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...

Download this article in PDF format. The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including ...

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...

A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage ...

The QST substrate, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co. Ltd developed, has been adopted for the 300-mm GaN power device development program at imec, Belgium. Sample evaluation is ...

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.