Nasdaq

TSMC Certifies Synopsys' Digital and Custom Design Platforms on TSMC 5nm FinFET Process Technology

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...
Nasdaq

Samsung Foundry Certifies Synopsys Design Compiler NXT for 5/4nm FinFET Process Technologies

Customers adopting Design Compiler NXT report significant reduction in runtimes together with improvements in power, performance and area (PPA) New advanced optimizations, such as concurrent clock and ...
EDN

All you need to know about GAA chip manufacturing process

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
ExtremeTech

GlobalFoundries announces new 7nm FinFET process, full node shrink

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...
Business Wire

Cadence Digital, Custom/Analog Design Flows Certified and Design IP Available for Intel 16 FinFET Process

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (Nasdaq: CDNS) today announced its digital and custom/analog flows are certified on the Intel 16 FinFET process technology and its ...
Business Wire

GLOBALFOUNDRIES Unveils FinFET Transistor Architecture Optimized for Next-Generation Mobile Devices

MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...
Semiconductor Engineering

Process Variation Analysis Of Device Performance Using Virtual Fabrication — Methodology Demonstrated On A CMOS 14-nm FinFET Vehicle

A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
EDN

Samsung and Synopsys Deliver Design Tools and IP for 14-nm FinFET Process

Synopsys, Inc. (Nasdaq:SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced certification and immediate ...
Digi Times

Attopsemi Scales I-fuse Technology to 7nm following 12nm Silicon Success

Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse technology has achieved silicon ...
Gizmochina

SMIC commences small-scale trial production of its second-gen N+1 process

At an interactive platform recently, the Shanghai-based Semiconductor Manufacturing International Corp (SMIC) hinted that it has started small-scale trial production of its second-generation N+1 ...
Digi Times

New NXP automotive processors built using TSMC 16nm FinFET process

NXP Semiconductors and TSMC have jointly announced volume production of NXP's S32G2 vehicle network processors and S32R294 radar processor built using TSMC's 16nm FinFET process technology. This marks ...
New Electronics

ARM, TSMC create multicore test chip on 10nm FinFET process

ARM has announced a multicore test chip featuring the 64bit ARM v8-A processor. Validation of the test chip – which was manufactured on TSMC’s 10FinFET process and taped out in Q4 2015 – is said to be ...