A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Carbon nanotube field-effect transistors (CNTFETs) represent a transformative advancement in nanoscale electronics, exploiting the unique electrical and mechanical properties of carbon nanotubes.

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...