So far in this series, significant efforts have been made to show the performance improvements that can be achieved with eGaN ® FETs over silicon MOSFETS in both hard and soft switching applications.

NBEMS FET Notification 2025: The National Board of Examinations in Medical Sciences (NBEMS) has announced the Fellowship Entrance Test (FET) 2025. According to the announcement issued today, January ...

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...

“2D materials have the potential to extend and augment the CMOS scaling roadmap. However, upscaling from lab-based demonstrators to 300 mm-compatible integration modules presents unique challenges. In ...