Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration ...
Recently, the group of professor ZHANG Yongsheng from the Institute of Solid State Physics, Hefei Institutes of Physical Science (HFIPS), Chinese Academy of Sciences (CAS) identified the orbital ...
An international research team has developed a new intermediate band solar cell (IBSC) design that includes a quantum ratchet (QR) semiconductor nanostructure. This new element reportedly enables ...
Measuring the band gap of materials is vital in the nanomaterial, semiconductor, and solar industries. This article illustrates how the band gap of a material can be established from its UV absorption ...
In semiconductor physics, the flat band potential is a critical parameter that influences the properties and behavior of semiconductors in contact with other materials, such as electrolytes or p-n ...
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