EDN

8M Low-Power CMOS SRAM

Alliance Memory announced the expansion of its line of legacy low-power CMOS SRAMs with a new 8M IC (512K x 16 bit) in the 48-pin 12-mm by 20-mm TSOP-I package. Available from a very limited number of ...
EDN

Low-power 32M CMOS SRAM in a 12x20mm TSOP-I package

Alliance Memory has expanded its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single ...
Electronic Design

Crolles2 Alliance reveals ultra-dense SRAM cell in 45 nm conventional bulk CMOS

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...
Electronic Design

High-Density, Low-Power 32M CMOS SRAM

Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. A line of legacy ...
Semiconductor Engineering

Zeno Semi Expands On-Chip Memory

San Jose, Calif.-based startup Zeno Semiconductor is testing modifications and a smaller process node for the single-transistor 28nm SRAM chip it introduced in 2016, which could boost space for ...
Nanowerk

IMEC presents functional 22nm SRAM cells fabricated using EUV technology

(Nanowerk News) Today, IMEC presented the world’s first functional 22nm CMOS SRAM cells made using EUV lithography. The 0.099µm2 SRAM cells are made with FinFETs and have both the contact and metal1 ...