Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
Organic bipolar transistors can also handle demanding data processing and transmission tasks on flexible electronic elements - for example here, for electrocardiogram ...
The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...
STMicroelectronics has introduced a hybrid emitter-switched bipolar transistor (ESBT) for use in welding equipment, induction heating systems and power factor correction for audio amplifiers. The ...
BRUSSELS — Microsemi Corporation has announced a state-of-the-art high power transistor for UHF long pulsed radar applications, hot on the heels of its successful UHF 'One Transistor, One ...
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