Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...
• The underlying migration mechanism of Mg 2+ in cathode materials and roles of defects in Mg 2+ migration in cathode materials were studied. • Applications of defect engineering to Mg 2+ migration in ...
image: THE INTRODUCTION OF DEFECTS INTO ELECTRODE MATERIALS FOR METAL-BASED BATTERIES IS AN EFFECTIVE STRATEGY TO IMPROVE BATTERY PERFORMANCE, DUE TO DEFECTIVE CATALYSTS HAVE THE ADVANTAGES OF HIGH ...
A recent review article published in Advanced Materials explored the potential of artificial intelligence (AI) and machine learning (ML) in transforming thermoelectric (TE) materials design. The ...
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