TOKYO, January 28, 2025--(BUSINESS WIRE)--OKI (TOKYO: 6703), in collaboration with Nisshinbo Micro Devices Inc. (Head office: Tokyo; President: Keiichi Yoshioka), has successfully achieved ...
A new chip-based quantum memory uses 3D-printed “light cages” to store light in atomic vapor with high precision. Quantum ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Quanergy Systems, Inc., a leading provider of LiDAR (Light Detection and Ranging) sensors and smart perception solutions, today announced the first commercial ...
At the 46th Design Automation Conference in San Francisco last month, attention turned to a discussion of how to extend the momentum of Moore’s Law into the next decade. One plausible solution, ...
Dublin, Jan. 31, 2024 (GLOBE NEWSWIRE) -- The "Global 3D Stacking Market by Method (Die-to-Die, Die-to-Wafer, Wafer-to-Wafer, Chip-to-Chip, Chip-to-Wafer), Technology (Through-Silicon Via, Hybrid ...
Next-generation semiconductor products increasingly rely on vertical integration technologies to drive system density, speed, and yield improvement. Due to the increased coupling effects across ...
OKI, working in collaboration with Nisshinbo Micro Devices, has reported that it has successfully achieved three-dimensional (3D) integration of thin-film analogue ICs using Crystal Film Bonding (CFB) ...
Over the years, the field of VLSI circuits has witnessed remarkable advancements. One such breakthrough is the advent of 3D integration, which has revolutionized the way integrated circuits are ...
3D electronics is an emerging manufacturing approach that enables the integration of electronics within or on the surface of objects. While it has long been used for adding antennas and simple ...
Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...
A new power supply technology for 3D-integrated chips has been developed using a vertically stacked architecture, where processing units are positioned directly above dynamic random access memory ...
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